FIELD: nondestructive detection of nonuniformity of pore distribution in porous silicon layers. SUBSTANCE: porous surface is irradiated with light and intensity of reflected beam from different sections is recorded; intensity of reflected light is measured and then structure is elastically deformed by bending so that porous structure becomes convex. Intensity of reflected light is measured again and degree of uniformity of porous silicon layer is detected by variations in light intensity measured before and after deformation. EFFECT: improved sensitivity of procedure in checking porous silicon layer for uniformity of pore distribution. 1 ex
