HIGH-POWER HIGH-FREQUENCY TRANSISTOR Russian patent published in 1997 - IPC

FIELD: semiconductor electronics. SUBSTANCE: invention can be used in manufacture of semiconductor devices, including high-frequency and SHF transistors. High-power high-frequency transistor is formed in case having emitter, base and collector leads. It incorporates number of transistor structures with electrodes of emitter, base and collector and ballast resistors in electric circuit connected in parallel. Semiconductor crystals are formed in transistor case on its emitter lead opposite to each transistor structure. Each crystal includes RC networks which present ballast resistor and capacitor connected in parallel. One end of each RC network is joined to emitter electrode by conductor, the other one is electrically coupled to emitter lead of transistor. EFFECT: improved energy parameters by provision for uniform distribution of current between individual transistor structures. 1 dwg