FIELD: computer engineering. SUBSTANCE: varying-ground metal bus of X- configuration read-only memory is shaped so that bus proper is placed on either side of recorded number of varying-ground (GND) polysilicone buses. Odd-numbered varying-ground polysilicone buses are connected to one varying-ground (GND) metal bus through polysilicone bus. Even-numbered varying-ground polysilicone buses are connected to other varying-ground metal bus through polysilicone bus. Each varying-ground metal bus is connected to ground (GND) terminal through control transistor cells. EFFECT: improved density of integration. 7 dwg
