FIELD: integrated-circuit capacitors and their manufacture. SUBSTANCE: method includes formation of lower electrode of capacitor by forming conducting layer specimen on semiconductor substrate followed by formation of surface layer from hemispherical silicon granules of first polarity of conductivity on conducting layer structure. Introducing surface layer of hemispherical silicon granules enlarges effective surface area of lower electrode at given horizontal dimensions. Surface layer of hemispherical silicon granules is doped with impurities of first polarity of conductivity (such as N-type) to minimize depleted layer that may be formed in lower electrode when reverse bias voltage is applied to capacitor thereby improving capacitor characteristics, Cmin/Cmax ratio. Diffusion barrier layer is also formed on lower electrode and then insulating layer is produced on diffusion barrier layer. It is desirable to produce diffusion barrier layer from material of sufficient thickness to prevent reaction between insulating layer and lower electrode as well as to eliminate outer diffusion of doping impurities from surface layer of hemispherical silicon granules into insulating layer. It is good practice to produce insulating layer from material of high dielectric strength to enhance capacity. EFFECT: enhanced effective area of lower electrode, improved characteristics of capacitor. 46 cl, 16 dwg
