METHOD FOR PRODUCING SEMICONDUCTOR MEMORY DEVICE (ALTERNATIVES) AND SEMICONDUCTOR MEMORY DEVICE Russian patent published in 2004 - IPC

Abstract RU 2234763 C2

FIELD: manufacturing semiconductor memory devices.

SUBSTANCE: in order to eliminate oxygen diffusion in discharge bus structure discharge buses or contact holes are covered with oxidation-preventing layer such as nitride layer.

EFFECT: enhanced resistance to oxidation of discharge buses.

27 cl, 13 dwg

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RU 2 234 763 C2

Authors

Park Jung-Vu

Nokh Dzun-Jong

Koo Bon-Jung

Kang Chang-Dzin

Dzung Chul

Nam Seok-Vu

Dates

2004-08-20—Published

1998-02-25—Filed