METHOD OF PRODUCING POLYCRYSTALLINE DIAMOND Russian patent published in 1999 - IPC

FIELD: electronic engineering; may be used in manufacture of electronic devices. SUBSTANCE: method includes blasting in water shell of trotyl-hexogen explosive composition with equal in weight additives of orthoboric acid and Al(OH)₃ amounting in total up to at least 5% of explosive composition; boiling of solid explosion products in mixture of acids; determination of diamond yield; explosure of diamond to effect of temperature and pressure in the region of diamond stability on carbon phase diagram. Diamond resistivity produced by the method corresponds to upper range of resistance of natural semiconductor diamond. Thickness of semiconductor layer of polycrystalline diamond is 10-fold higher than the thickness of semiconductor single crystal diamond. EFFECT: higher efficiency.