METHOD OF PREPARING EPITAXIAL STRUCTURES OF NITRIDES OF A GROUP ELEMENTS Russian patent published in 1999 - IPC

FIELD: technology of preparing semiconducting A³N type compounds, more particularly manufacture of epitaxial structures of various purposes. SUBSTANCE: method of preparing epitaxial structures of nitrides of A³ group elements on crystalline substrates comprises creating one or more molecular streams containing A³ group elements and molecular ammonia stream in vacuum chamber under collision-free conditions by admitting said ammonia stream into vacuum chamber from gas source: ratio of density of molecular ammonia stream to total density of molecular streams of A³ group elements varies from 100 to 10,000. EFFECT: improved quality of epitaxial structures and greater rate of growth thereof. 1 ex, 1 dwg