METHOD OF InGaN MULTILAYER STRUCTURE GROWTH BY PLASMA MBE Russian patent published in 2009 - IPC H01L21/205 

FIELD: chemistry.

SUBSTANCE: method of InGaN multilayered structure growth contains substrate installed in growing vessel of plasma molecular beam epitaxy device equipped with nitrogen activator for preparation III group element to nitride layer growth. Activated nitrogen flow is directed on substrate through nitrogen activator. At the same time Ga flow and In flow are directed on InGaN layer set growth substrate with various In content, thereby forming InGaN multilayered structure. InGaN multilayered structure formation stage includes variation of RF-power of nitrogen activator thus varying In content in InGaN layer with simultaneous keeping constant falling Ga and In flows and consumption of gaseous nitrogen supplied to nitrogen activator.

EFFECT: simplified InGaN multilayered structure with various In content.

12 cl, 11 dwg