FIELD: semiconductor devices (light-emitting and laser diodes, bipolar transistors). SUBSTANCE: structure formed on crystal substrate has p-type InAs semiconductor layer placed between p layer and external metal contact layer. Semiconductor p-type InAs compound has some of In atoms substituted by Ga and/or Al atoms. Proposed epitaxial semiconductor structure of group A3 elements formed on crystal substrate enables enhancing efficiency and service life of semiconductor devices and emission of light- emitting and laser diodes, reducing number of electron levels on semiconductor-to-semiconductor interface compared with A3N-group semiconductor-to-metal interface, and reducing resistance on mentioned interface. EFFECT: improved characteristics of devices using proposed structure. 2 cl, 1 dwg
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