PLANT FOR GROWING EPITAXIAL SEMICONDUCTOR STRUCTURES ON SINGLE-CRYSTALLINE SUBSTRATES Russian patent published in 2000 - IPC

FIELD: equipment for manufacturing components of semiconductor devices. SUBSTANCE: plant has vacuum chamber accommodating final element of handler in the form of rod which is free to turn about its longitudinal axis and provided with detachable substrate holder, heater whose casing accommodates heating element and thermal screen with cavities in its walls to supply cooling liquid. Heater is mounted on loose end of turning rod and detachable substrate holder is installed on heater casing in a spaced relation to heating element. Thermal screen of heater with cavities in its walls is built up of two shells that completely close heater and substrate holder on all sides and are provided with pins turning relative to axes perpendicular to longitudinal axis of handler rod. Pins have channels for admitting and discharging cooling liquid which communicate with cavities in walls of thermal screen shells; shell bottom has window on substrate holder side that provides communication between substrate and vacuum chamber. EFFECT: improved quality of semiconductor joint due to reduced ammonia disintegration in vacuum chamber. 3 dwg