FIELD: semiconductors. SUBSTANCE: method involves affecting monitored object by external influence, measuring alteration of information parameter, which provides data about quality of monitored object. Voltage level of electrostatic pulse which is applied to integral circuit is equal to half of hazardous level. Then method involves annealing flaws under maximal possible temperature for 24-38 hours. EFFECT: simplified quality control without added non-controlled faults using standard and safe temperature. 1 dwg
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