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IPC

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Application

99102916/28, 1999-02-15

(24)

Start date

1999-02-15

(22)

Actual filing date

1999-02-15

(45)

Published

2000-05-27

(72)

Inventor

Khrunov V.S.Martynov S.S.Kasherininov P.G.Kasherininova R.S.Lodygin A.N.

(73)

Holder

Fiziko-Tekhnicheskij Institut Im. A.F. Ioffe Ran

PHOTODETECTOR Russian patent published in 2000 - IPC

Abstract RU 2150159 C1

FIELD: electronics, simultaneous registration of intensity of pulse radiation and energy of incident radiation. SUBSTANCE: photodetector has insulating layer in the form of gas dielectric and wide-zone insulating semiconductor crystal placed between two optically clear electrodes connected to source of extrinsic voltage. Novelty of proposal consists in manufacture of working area S of photodetector satisfying relation S≥10 sq.mm. EFFECT: photodetector does not practically polarize in process of radiation registration. 3 dwg

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RU 2 150 159 C1

Authors

Khrunov V.S.

Martynov S.S.

Kasherininov P.G.

Kasherininova R.S.

Lodygin A.N.

Dates

2000-05-27—Published

1999-02-15—Filed

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