FIELD: physics.
SUBSTANCE: method comprises forming a p-type InAs layer on an n-type substrate. Before depositing contacts on the p-type InAs layer, the method comprises growing a layer of a wide-band gap solid solution of p-type InAsSbP with hole concentration of 1016cm-3 ÷ 1018 cm-3.
EFFECT: high differential resistance.
2 cl, 1 dwg
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