METHOD FOR PRODUCING SILICON NANOSTRUCTURES Russian patent published in 2002 - IPC

FIELD: electronics; nanostructures for data signal transmission, conversion, storage, and generation. SUBSTANCE: method involves exposure of silicon-containing material to impact of physical and chemical factors followed by precipitation of silicon separating due to mentioned impact in nanocavities of silicate matrix. Novelty is that matrix proper is heated at a rate of 20-500 C/min in reducing medium up to 700-950 C and exposured to said temperature for time period depending on pre-constructed curve of desired size of nanostructure as function of matrix heating time. Matrix may have open nanocavities on surface. It may be made of dehydrated opal. Matrix may be heated at reduced medium pressure such as 10^-5-10^-6 mm Hg. EFFECT: provision for producing nanostructures of various configurations both within matrix and on its surface. 5 cl, 1 dwg, 1 tbl