MONOCRYSTALLINE SILICON CARBIDE SiC AND METHOD OF ITS PRODUCTION (VERSIONS) Russian patent published in 2001 - IPC

FIELD: semiconductor technology for light-emitting diodes, X-ray optical members, high-temperature semiconductors, etc. SUBSTANCE: complex formed by growth of wafer from polycrystalline beta-SiC by method of thermochemical precipitation flow vapor phase on crystal orientation surfaces which are combined in one direction, and many wafer blanks from monocrystalline silicon carbide SiC laid into pile and found in closed contact, is subjected to heat treatment at temperature from 1850 to 2400 C. Due to this, single crystal oriented in the same direction with crystallographic axes of blanks from monocrystalline silicon carbide SiC is grown from crystal orientation surfaces in direction to wafer from polycrystalline beta-SiC. EFFECT: easy and efficient production of monocrystalline silicon carbide of high quality with no crystallization nuclei, impurities, defects in the form of microblisters etc. 18 cl, 9 dwg