MONOCRYSTAL SiC AND METHOD OF ITS GROWTH Russian patent published in 2000 - IPC

FIELD: semiconductor industry; manufacture of diodes, amplifiers and optical elements. SUBSTANCE: complex (M) made through growing polycrystal water β-SiC whose thickness is about 10 mkm or more on surface of monocrystal base material α-SiC by means of spraying with high-quality magnetron or thermochemical vapor precipitation is subjected to heat treatment at temperature of from 1650 to 2400 C owing to which polycrystals of polycrystal cube water β-SiC are transformed into monocrystal and monocrystal is grown which is oriented in the same direction as crystal axis of monocrystal base material α-SiC. EFFECT: improved quality of monocrystal SiC free from microshrinkage defects and defects caused by microshrinkage. 11 cl, 3 dwg