FIELD: semiconductor industry. SUBSTANCE: invention offers grown complex made by laying in stack of polycrystalline beta-Sic water onto surface of monocrystalline alpha-Sic base material with intimate contact through polished surface, or obtained by chemical vapor precipitation, and subjected to heat treatment at temperature from 1850 to 2400 C. Due to this procedure, polycrystals of polycrystalline cubic beta-Sic wafers are transformed into single crystal oriented in direction similar to that of crystalline axis of single-crystal alpha-Sic of base material. EFFECT: easy and efficient production of large high-quality Sic single crystal having no microshrink defects, lattice defects, formation of rough boundaries caused by impurities etc. 18 cl, 8 dwg
