PLATE OF LARGE DIAMETER MADE OUT OF SiC AND METHOD OF ITS FABRICATION Russian patent published in 2008 - IPC H01L21/205 

FIELD: metallurgy.

SUBSTANCE: invention refers to a SiC plate with an outer diameter of six inches and to a method of its fabrication. To achieve that a polycrystalline SiC is being grown from at least one side of a small diameter plate surface made out of a mono crystalline α-SiC up to a dimension when its outer diameter corresponds to a manipulation device of an existing line for semiconductors fabrication; and than the polycrystalline SiC received out of the mono crystalline SiC on the surface of the plate is ground to achieve the SiC of a bigger diameter with a double structure where the polycrystalline SiC has been grown around the outer periphery of the smaller diameter plate out of the mono crystalline α-SiC.

EFFECT: economise fabrication of a semiconducting device on the base of a SiC an existing line of devices fabrication on the base of SiC is used so as to achieve the possibility to manipulate the plate of a smaller diameter made out of SiC.

5 cl, 4 dwg