SEMICONDUCTOR LIGHT-EMITTING DIODE (ALTERNATIVES) Russian patent published in 2001 - IPC

FIELD: electronic engineering; electronic and optoelectronic industries. SUBSTANCE: proposed p-n light-emitting diode is available of four alternatives. That of first alternative has its metal contact of p layer made in the form of single-crystal metal cylinder with body- or face-centered lattice 111 or 100, respectively. Contact of p layer may be made of following metals: molybdenum, tungsten, niobium, or other metals. Grown on outer surface of this contact is single-crystal cylindrical semiconductor p layer with cylindrical single-crystal n layer formed on its outer surface. Pair of cylindrical metal contacts of n layer formed of alloy of two metals is arranged over peripheral parts of n layer surface symmetrically from center. EFFECT: enhanced radiation power; reduced electrothermal destruction. 14 cl, 4 dwg