SEMICONDUCTOR P-N INJECTION LASER (VERSIONS) Russian patent published in 2003 - IPC

FIELD: electronic engineering. SUBSTANCE: semiconductor p-n laser has degenerated single-crystal n⁺ layer, single-crystal n layer, single- crystal p layer, n layer metal contact, and p layer metal contact. In first alternative metal contact of n layer is made of single-crystal cylinder of metal having space-centered or face-centered lattice with faces 111 or 100; outer surface of cylinder carries cylindrical degenerated single- crystal n⁺ layer, cylindrical single-crystal n layer, cylindrical single- crystal p layer, and cylindrical metal contact of p layer made of two- component alloy. In second alternative degenerated single-crystal n⁺ layer is grown in the form of hollow cylinder whose inner surface carries metal contact of n layer shaped as hollow cylinder made of two-metal alloy and outer surface caries cylindrical single-crystal n layer, cylindrical single-crystal p layer, and cylindrical metal contact of p layer made of two-component alloy, all arranged in tandem. In third alternative degenerated single-crystal n⁺ layer is grown in the form of solid cylinder of predetermined length whose outer surface carries cylindrical single-crystal n layer, cylindrical single-crystal p layer, and metal contact of p layer made of two-component alloy, all arranged in tandem, metal contact of n layer is grown on butt-ends of degenerated single-crystal n⁺ layer and is made of two-metal alloy. EFFECT: enhanced light-emitting power, reduced electrothermal degradation level. 15 cl, 3 dwg