THYRISTOR Russian patent published in 2001 - IPC

FIELD: electronics, design and manufacture of semiconductor silicon controlled thyristors of multilayer structure. SUBSTANCE: degenerate monocrystalline silicon layer of n⁺ type is grown in the form of hollow cylinder on which inner surface metal cathode contact is formed in the form of two cylindrical layers made of different non-magnetic metals and which outer surface carries first degenerate monocrystalline silicon layer of p⁺ type, active monocrystalline silicon layer of n type, second degenerate monocrystalline silicon layer of p⁺ type having cylindrical shape and formed in sequence. Metal anode contact coming in the form of two cylindrical layers made of non-magnetic metals is deposited above second degenerate monocrystalline silicon layer. Metal contact of controlling electrode in the form of symmetrical pair of contacts, each including two cylindrical layers made of non-magnetic metals, is formed in body of first degenerate monocrystalline silicon layer of p⁺ type. Conductivity of upper cylindrical layer of metal in each contact is higher than conductivity of lower cylindrical layer of metal in direction of flow of electric current. EFFECT: avoidance of edge effect, increase of break-down voltage, reduction of level of electrical heat and magnetic heat degradation and raised stability of electrical parameters of thyristors. 1 cl, 1 dwg