GUNN-EFFECT DIODE (DESIGN VERSIONS) Russian patent published in 2001 - IPC

FIELD: electronic engineering; microwave diodes for electronic and radio electronic industry. SUBSTANCE: diode has its cathode metal contact made in the form of single-crystal nonmagnetic metal cylinder with body- centered or face-centered lattice incorporating faces 111 or 100. Grown on its external surface is first cylinder-shaped degenerated single-crystal n layer whose external surface carries sequentially formed cylinder-shaped active single-crystal n layer and second degenerated n⁺ layer. Deposited on the latter layer is anode metal contact in the form of two cylindrical layers made of different metals. Electric conductivity of upper cylindrical metal layer of pair is higher than that of lower one along current flow. Two more design versions of Gunn-effect diodes are proposed. EFFECT: increased output microwave power, reduced electrothermal degradation. 9 cl, 3 dwg