INSULATED-GATE FIELD-EFFECT TRANSISTOR Russian patent published in 2001 - IPC

FIELD: electronic engineering; heavy-current control devices for electrical and electronic industries. SUBSTANCE: degenerated single-crystal silicon n+т layer of transistor drain is made in the form of hollow cylinder. Cylinder- shaped metal contact of drain is formed on inner surface of this layer. Single-crystal silicon n layer is formed on outer surface of this layer to organize conduction channel. Central part of single-crystal silicon n layer for organizing conduction channel carries cylindrical insulating layer with cylindrical metal contact of gate deposited on its surface; pair of cylindrical metal contacts of source is provided on ether side of gate. EFFECT: facilitated suppression of end effect; reduced electrothermal degradation level; enhanced operating power. 2 cl, 1 dwg