METHOD FOR ION SYNTHESIS IN SILICON OF BURIED INSULATOR LAYER Russian patent published in 2002 - IPC

FIELD: multilayer silicon-on-insulator structures with buried insulator layer. SUBSTANCE: method includes implantation of oxygen ions in silicon substrate with pre-stoichiometric doses to produce silicon dioxide therein, implantation of ions containing other substance with energy ensuring close disposition or coincidence of concentration profile maximum of this substance atoms relative to implanted oxygen, heat treatment resulting in migration of atoms of this substance towards oxygen profile maximum where essential fractions of their total amount form chemical compound together with silicon possessing insulating properties. Used as ions of other substance are components incorporating substance atoms reacting with silicon dioxide to produce glass; depth of concentration profile maximum of these atoms coincides with or is disposed farther from substrate surface than depth of implanted oxygen. Heat treatment is conducted within time space limited by migration of these atoms in glass produced jointly with silicon dioxide and at temperature higher than softening point but lower than glass- transition temperature. EFFECT: reduced thermal budget of process at improved quality of synthesized structures. 1 tbl