FIELD: semiconductor device manufacture; cleaning semiconductor structures from growth and in-process microflaws.
SUBSTANCE: proposed method for gettering treatment of semiconductor structures includes treatment of structure underside surface by irradiating it with medium-energy ions at room temperature to render it amorphous; prior to irradiation structure is exposed for 2.5 or 3 h to inert atmosphere at temperature ranging within (0.4 - 0.7)Tm, where Tm is melting point of structure material; then structure is cooled down in liquid nitrogen.
EFFECT: enhanced efficiency of gettering process due to reduced concentration of microflaws in semiconductor structures.
1 cl, 2 tbl
