THERMOELECTRIC LIGHT-EMITTING DIODE Russian patent published in 2025 - IPC H10H20/80 H10H20/833 

FIELD: semiconductor light-emitting diodes.

SUBSTANCE: invention relates to semiconductor light-emitting diodes, which are widely used in optical information display devices, traffic lights, communication systems, lighting devices and medical equipment. Thermoelectric light-emitting diode, according to the invention, comprises a graded-gap structure from direct-gap semiconductor materials, with a variable output function in the growth direction of epitaxial structure in the whole range of compositions grown on base, wherein the base comprises a semiconductor material with n-type conductivity, and the graded-gap structure has p-type conductivity and forms a p-n-junction between the base and the grown structure or is a p-n-structure with smooth doping from p-type at the point of contact with the base to n-type in the opposite area, wherein on two opposite sides of the thermoelectric light-emitting diode there are semitransparent contacts with the possibility of attaching connecting conductors to them for connection to an electric circuit.

EFFECT: invention makes it possible to reduce, exclude or make negative heat release during operation of thermoelectric light-emitting diode and, as a result, eliminate the possibility of light-emitting diode overheating and its failure.

6 cl, 1 dwg