FIELD: electronic engineering. SUBSTANCE: upon formation of set of layers incorporating at least one active layer on front end of base semiconductor substrate the latter is at least partially removed and then set of layers is connected to external substrate. Base substrate is removed by liquid chemical etching in etcher selective for base substrate material whereupon first metal contact layer is deposited onto underside of set of layers facing front end of now removed base substrate and second metal layer, on front end of external substrate. Then underside of set of layers is connected to front end of external layer under effect of heat through eutectic joint. Proposed method provides for improved electric contact between set of epitaxial layers and external substrate at heavy currents. EFFECT: enhanced yield of light-emitting diode structures. 9 cl, 3 dwg
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