SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING PROCESS Russian patent published in 2000 - IPC

FIELD: semiconductor electronics; laser diodes and light-emitting diodes. SUBSTANCE: process includes growing epitaxial structure on semiconductor substrate, applying mask to structure, etching port in mask, diffusing doping impurities in structure through mentioned port, removing the mask, depositing contacts, cutting plates into chips, fitting chip onto heat sink; applied to epitaxial structure as mask is additional semiconductor layer of material suited to selective etching, its thickness being chosen from condition d₂ > d₁•(ν₂/ν₁), where d₁ is total thickness of epitaxial layers through which doping impurities are to be diffused; d₂ is thickness of additional semiconductor layer; ν₁ is mean rate of diffusion of doping impurities in epitaxial layers of structure; ν₂ is mean rate of diffusion of doping impurities in additional semiconductor layer. EFFECT: facilitated manufacture, improved service life, and reduced cost.