CONTACT FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE Russian patent published in 2013 - IPC H01L33/30 

FIELD: physics.

SUBSTANCE: method of making a semiconductor light-emitting device according to the invention includes steps of: growing a semiconductor structure having a AlGalnP light-emitting layer between an n-type region and a p-type region on a growth substrate; forming n- and p-contacts that are electrically connected to n- and p-type regions of the semiconductor structure, wherein both contacts lie on the same side of the semiconductor structure and wherein at least one of the n- and p-contacts is reflecting; connecting said semiconductor structure to a mounting; and after connecting the semiconductor structure to a mounting, the growth substrate is removed; wherein said semiconductor structure has a p-type contact layer between said p-type region and said p-contact; and a portion of said p-type contact layer is doped to hole concentration of at least 5×10¹⁸ cm^-3 to provide an electric contact.

EFFECT: low power consumption, small size and high reliability.

15 cl, 7 dwg