FIELD: chemistry.
SUBSTANCE: method includes application of several semiconductor substrates, on all surfaces of which electricity-conducting layer is created, substrates are collected in form of package, with electric discharge being initiated in mode of melt formation, before initiation of discharge, in package formed is at least one through hole, which possesses specified shape, geometrical dimensions and axial symmetry, and axis of which is oriented strictly parallel to profiling electrode, with realisation of further initiation of electric discharge in mode of melt formation under conditions of profiling electrode movement around hole on specified trajectory, copying its contour.
EFFECT: provision of possibility to increase universality of method for erosive copying of silicon carbide structures.
1 dwg
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