FIELD-EFFECT TRANSISTOR WITH HETEROJUNCTION Russian patent published in 2019 - IPC H01L21/338 H01L29/778 H01L27/105 

FIELD: electrical engineering.

SUBSTANCE: method of making a field-effect transistor with a heterojunction comprising a semiconductor structure of superimposed layers, involving: providing on substrate layer (1) buffer layer (2), channel layer (3) and barrier layer (4) made of materials with hexagonal crystal structure of type Ga_(1-p-q)Al_(p)In_(q)N, making a hole in the dielectric masking layer (5) applied on the barrier layer, growing with epitaxy at high temperature of semiconductor material (6, 6') with hexagonal crystal structure Ga_(1-x'-y')Al_(x')In_(y')N doped with germanium on the growth zone defined by the hole made in the masking layer, application of contact electrode of source or drain (15, 16) on material applied with epitaxy, and electrode of gate (13) at location outside growth zone.

EFFECT: invention provides improved setting of edges of localized epitaxial layers.

8 cl, 6 dwg