FIELD: physics.
SUBSTANCE: invention relates to a method of stacking semiconductor structures by epitaxial deposition techniques. Method for increasing monocrystalline layers of semiconductor structures carried out by epitaxial deposition involves passing a stream of a growth-forming substance over a surface of a monocrystalline semiconductor substrate heated to a predetermined temperature, and this surface is activated by laser radiation directed at a sliding angle to the surface and having linear polarization, in which the electric field vector E lies in a plane which is substantially perpendicular to the plane tangent to the surface at the point of incidence of the laser radiation.
EFFECT: technical result consists in increase in monocrystalline layers growth rate in semiconductors without increase in the number of defects of their structure.
7 cl, 1 dwg
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