FIELD: production of semiconductor material monocrystals.
SUBSTANCE: method involves formation of barium-containing coating of barium hydroxide on inner and/or outer surface of heated quartz crucible, said coating being formed by spraying suspension of barium hydroxide in air atmosphere on surface of quartz crucible heated to temperature of 100-150 C.
EFFECT: improved uniformity and homogeneity of coating to thereby increase yield of product and reduce discard in production of monocrystalline silicon ingots.
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