FIELD: electricity.
SUBSTANCE: invention allows increasing a power gain factor of a high-power radio-frequency transistor structure (TS) with its emitter regions (ER) connected with a input matching circuit capacitor formed on a surface of the same semiconductor substrate to actualise various stabilising resistances (SR). For this purpose, the width of the metallised strips (MS) connecting the individual ERs with the lower capacitor coating is narrowed with the required SR increasing. Relative MS width reduction does not exceed the relation of such SR to minimum.
EFFECT: reduced area of substrate surface metallisation being under emitter voltage and thereby reduced stray transfer 'collector-emitter' capacitance.
2 dwg
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