FIELD: instrument making.
SUBSTANCE: nitride semiconductor light-emitting instrument comprises the following components: nitride semiconductor area of n-type, active layer formed on nitride semiconductor area of n-type, and nitride semiconductor area of p-type, formed on active layer. Nitride semiconductor area of p-type has multi-layer structure, in which at least two pairs of GaN layers alloyed with acceptor admixture and AlGaN layers alloyed with acceptor admixture or admixture-free that alternate with each other are stratified.
EFFECT: suggested nitride semiconductor light-emitting instrument has improved morphology of surface and electric characteristics.
11 cl, 6 dwg
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