HIGH-FREQUENCY POWER DIODE AND METHOD OF ITS MANUFACTURING Russian patent published in 2019 - IPC H01L29/868 H01L21/329 

FIELD: electricity.

SUBSTANCE: high-frequency power diode comprises a semiconductor substrate having a first main side (101) and a second main side (102), first conductive type first layer (103) formed on first main side (101), second conductivity second layer (105) formed on second main side (102) of substrate, and third layer (104) of second conductivity type formed between first layer (103) and second layer (105). First layer (103) has dopant concentration which drops from 10¹⁹ cm^-3 or more near first main side (101) of substrate to concentration of 1.5⋅10¹⁵ cm^-3 or less at interface of first layer (103) with third layer (104). Second layer (105) has dopant concentration which drops from 10¹⁹ cm^-3 or more near second main side (102) of substrate to concentration of 1.5⋅10¹⁵ cm^-3 at interface of second layer (105) with third layer (104), and third layer (104) has concentration of dopant 1.5⋅10¹⁵ cm^-3 or less. Concentration of dopant in first layer (103) at 50 mcm from first main side (101) of substrate and concentration of dopant in second layer (105) at 50 mcm from second main side (102) of substrate is 10¹⁷ cm^-3 or more, and thickness of third layer (104) is less than 60 mcm.

EFFECT: invention provides a high-frequency power diode, which can be used at high frequencies with low voltage in the open state of the diode and high allowable current load.

19 cl, 4 dwg