STRUCTURE OF BIPOLAR TRANSISTOR INCORPORATED IN BIPOLAR CMOS INTEGRATED CIRCUITS Russian patent published in 2003 - IPC

FIELD: microelectronics; bipolar complementary metal-oxidesemiconductor devices. SUBSTANCE: proposed structure is used for bi-CMOS devices having single chip whereon bipolar and field-effect transistors are formed. Silicon wafer incorporating collector, base, and emitter regions, contacts for collector, base, and emitter regions, insulating field-effect oxide around transistor base region and between base and collector contact regions, highly doped region of same polarity of conductivity as collector disposed under filed-effect oxide surrounding base region has its highly doped region of same polarity of conductivity as collector under insulating field-effect oxide surrounding base region on four sides and contact with base region is effected through single-crystalline silicon electrode; other highly doped region of same polarity of conductivity as collector is disposed in collector under active base region. New structure of bipolar transistor with shunt surrounding emitter on four sides provides for reducing collector resistance. EFFECT: enlarged functional capabilities and enhanced effectiveness of digital and analog circuits. 2 cl, 3 dwg