NON-EPITAXIAL STRUCTURE OF BIPOLAR TRANSISTOR Russian patent published in 2009 - IPC H01L27/06 

FIELD: physics, conductors.

SUBSTANCE: invention is related to microelectronics. In non-epitaxial structure of bipolar transistor, including areas of collector, base and emitter in silicon plate, contacts to areas of collector, base and emitter, besides contacts to areas of base and emitter are realised via electrodes from polycrystalline silicon, insulating field oxide around area of transistor base and between areas of base and contact to collector, the first highly alloyed area of the conductivity type same as in collector area, arranged under field oxide, surrounding the areas of base from four sides, the second highly alloyed area of the conductivity type same as in collector, arranged in collector under area of active base, electrode of emitter is created on silicon oxide by type of MOS-transistor gate, besides actual size of emitter area is defined by value of end etching of silicon oxide layer under emitter electrode, area of emitter is filled by polycrystalline silicon, contact to base is arranged with the help of electrode from polycrystalline silicon, and the second highly-alloyed area of the conductivity type same as in collector is arranged only under areas of active base on sections between area of emitter and field oxide.

EFFECT: higher efficiency and extent of bipolar transistor integration.

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