HIGH-SPEED METHOD FOR DEPOSITING DIAMOND FILMS FROM GAS PHASE IN PLASMA OF SHF-DISCHARGE AND PLASMA REACTOR FOR PERFORMING THE SAME Russian patent published in 2003 - IPC

FIELD: possibility for applying polycrystalline diamond films (plates) for making outlet windows of power SHF irradiation sources. SUBSTANCE: method comprises steps of initiating gaseous mixture of hydrogen and hydrocarbon by increasing electron concentration in plasma of SHF discharge; depositing formed atoms of carbon-containing groups onto substrate for receiving polycrystalline diamond film in the result of surface reactions; realizing initiation of above mentioned gaseous film due to creating in reaction chamber stable nonequilibrium plasma by means of SHF irradiation with power no less than 1 kWt and with frequency significantly exceeding generally used frequency 2.45 GHz; in order to localize plasma in vicinity of substrate forming standing wave in antinodes of which generating and sustaining plasma layers with possibility of controlling their size. Invention provides high-speed deposition of diamond films of high quality onto substrates with diameters more than 100 mm. EFFECT: enhanced quality of diamond films. 15 cl, 8 dwg, 1 tbl, 1 ex