PLASMA MICROWAVE REACTOR Russian patent published in 2017 - IPC C23C16/27 C23C16/511 C23C16/54 

FIELD: machine engineering.

SUBSTANCE: invention relates to plasma microwave reactors for chemical deposition of materials from the gas phase, in particular for carbon (diamond) films production. The plasma microwave reactor for gas-phase diamond film deposition on the substrate comprises a waveguide line to supply radiation from the microwave generator to the reactor, a cylindrical resonator, a reaction chamber with a system for pumping and evacuation of a gas mixture containing hydrogen and a hydrocarbon, and a substrate mounted on a substrate holder in the reaction chamber. The cylindrical resonator is configured to excite three axially symmetric modes TM_01n, TM_02n and TM_03n simultaneously by means of a whip antenna located coaxially with its axis. The upper end wall of the cylindrical resonator is an upper mode converter made in the form of an electrically short-circuited segment of a circular waveguide, passing into a conical waveguide with a circular base with an external diameter equal to the resonator diameter. The lower end wall of the cylindrical resonator has a shoulder made with a profile with outer diameter equal to the inner diameter of the cylindrical resonator and the inner diameter provides attenuation of the TM_03n mode along the axis of the cylindrical resonator with a shoulder. The said shoulder is arranged to move along the side wall of the cylindrical resonator relative to the lower end wall of the cylindrical resonator. The said reactor is provided with a adjusting device to tune the cylindrical resonator by moving the end wall of the cylindrical resonator.

EFFECT: creation of a plasma microwave reactor for gas-phase deposition of diamond films having a diameter of more than half the length of the microwave and high uniformity at a large diameter.

8 cl, 6 dwg