MICROWAVE PLASMA REACTOR FOR OBTAINING A HOMOGENEOUS NANOCRYSTALLINE DIAMOND FILM Russian patent published in 2018 - IPC C23C16/27 C23C16/458 C23C16/54 

FIELD: instrument engineering.

SUBSTANCE: invention relates to a microwave plasma reactor with volume-cavity energy transfer to an area above substrate limited by the shape of a plasma formation in the form of half-ellipse, which creates indirect heating when the coating is deposited on a low-aspect substrate or simultaneously on a group of substrates. Microwave plasma reactor for obtaining a homogeneous nanocrystalline diamond film contains a hermetically sealed axisymmetric chamber, the central part of which is a microwave resonator and is a radial wave guide with microwave field, and a cooled substrate holder installed therein, and is noted for the fact that the plasma-forming cassette with an external diameter proportional to the microwave field length is installed axially in the microwave resonator, this cassette has at least one inner opening, where the base of said cassette facing the substrate holder, and the axes of holes are oriented perpendicular to it, while the height H of the cassette is 1.75h ≤ H > 0.75h, where h is the height of the substrate for placement in the inner hole of the cassette.

EFFECT: it is possible to create a microwave plasma reactor with a high temperature field homogeneity on the surface of the substrates to obtain a homogeneous nanocrystalline diamond film.

1 cl, 3 dwg, 1 ex, 1 tbl