MICROWAVE PLASMA REACTOR FOR GAS-PHASE DEPOSITION OF DIAMOND FILMS IN GAS FLOW (VERSIONS) Russian patent published in 2016 - IPC C23C16/27 C23C16/513 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a microwave plasma reactor for gas-phase deposition of diamond films in gas flow (versions). Design of reactor based on two coupled resonators - cylindrical resonator and attached to its end wall annular coaxial resonator, along axis of which (coaxially to resonators) there is a reaction chamber in form of a dielectric pipe, enables to generate and maintain axially symmetric plasma in reaction chamber only in one area of resonator near substrate. Selection of diameter d of reaction chamber which satisfies condition: d² < V/p·(C), where V is speed of external gas flow in cm/s, p is pressure of gas mixture in reaction chamber in Torr, C is a constant, having dimensions [1/cm·s·Torr] and equal to 10^-3, enables, with power absorbed in plasma higher than 500 W, to provide laminar vortex-free flow of gas mixture over substrate, which in turn enables fast replacement of deposited gas mixture, and thus, enables to deposit onto substrate multilayer poly- or monocrystalline diamond films, having different electrophysical characteristics of layers.

EFFECT: deposition of diamond films in gas flow.

10 cl, 3 dwg