FIELD: UHF equipment.
SUBSTANCE: invention relates to a UHF plasma reactor for depositing diamond film on hard alloy substrate made with the possibility of controlling a temperature of indirect substrate heating. The UHF plasma reactor contains a sealed axisymmetric chamber, the central part of which is a UHF resonator, and a substrate holder to accommodate substrate or a group of hard alloy substrates, which is a radial waveguide with a UHF field, and an exorbitant conductive ring made of refractory material in the form of a waveguide, installed in this chamber. The substrate holder is installed in the specified chamber on a cooled conductive platform. The mentioned exorbitant conductive ring is made with the possibility of placing substrate or the group of hard alloy substrates in its hole. The exorbitant conductive ring is temperature-controlled by feedback from an infrared pyrometer. The exorbitant conductive ring is installed at one end of a movable holder made of UHF transparent material, and the second end of the mentioned holder is connected to an actuator interacting by a signal from the infrared pyrometer. A base of the exorbitant conductive ring is facing the substrate holder of substrate. Substrate is oriented perpendicular to the holder of the exorbitant conductive ring. A height H of the movement of the mentioned ring axially to the UHF resonator is 0.75h<H≤1.75h of a height h of one or a group of the mentioned substrates installed in the hole of the ring.
EFFECT: control and stabilization of the heating temperature of substrate lying on the base conducting platform of the reactor inside the exorbitant conductive ring is provided, the growth rate of diamond film is stabilized to obtain a homogeneous structure of single-layer or multilayer coating with an accuracy of temperature stabilization ±10°C per 100 mcm of displacement of the exorbitant ring.
1 cl, 7 dwg, 1 tbl, 1 ex
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Authors
Dates
2021-12-16—Published
2019-11-05—Filed