FIELD: electric engineering.
SUBSTANCE: powerful UHF transistor structure has areas of collector, base and emitter and ballast resistor, by one side in contact with metallic cover of emitter area, and by opposite side in contact with metallic cover of area for connecting emitter conductor. In ballast resistor fragments of material with relatively greater specific resistance are present. Required value of resistor resistance and set law of resistance change along resistor bus are realized due to selection of amount, geometry and distribution of fragments along resistor width. Additional condition for average lengths and conductivity of resistor portions provides for decreased length of ballast resistor and, in this way, decrease of transistor structure area.
EFFECT: decreased pass capacity collector-emitter and full collector capacity of transistor and length of ballast resistor, increased power amplification coefficient and decreased area of transistor structure.
1 dwg
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