HEAVY-POWER MICROWAVE TRANSISTOR STRUCTURE Russian patent published in 2003 - IPC

FIELD: semiconductor electronics. SUBSTANCE: transistor structure has collector, base, and emitter zones with minimal distance between centers of emitter zone fragments, as well as ballast resistor contacting metallized emitter zone on one end and metallized pad for connecting emitter conductor, on opposite end. Ballast resistor has depressions whose width at points where resistor contacts metallized emitter zone does not exceed one third of emitter zone multiplication pitch. Desired value of resistor and given mechanism of variations in resistance through resistor width are attained by varying number and geometry of depressions and also distribution density of depression areas through resistor height according to specified mean lengths and conductivity of resistor sections. EFFECT: reduced collector-to-emitter transfer capacitance and available collector capacitance; reduced area of transistor structure. 1 cl, 2 dwg