RESONANCE-TUNED TUNNEL TRANSISTOR Russian patent published in 1995 - IPC

Abstract SU 1568825 A1

FIELD: electronic engineering. SUBSTANCE: at least one of potential barriers of quantum heterostructure, namely, barrier limiting potential well on base layer side, is built up of two semiconductor material layers differing in width of forbidden gap which for layer abutting base one is intermediate between width of forbidden gap of barrow-band material layer forming potential well and barrier layer abutting it. EFFECT: improved speed of response. 2 dwg

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SU 1 568 825 A1

Authors

Kal'Fa A.A.

Tager A.S.

Dates

1995-07-25—Published

1988-07-01—Filed