THIN FILMS OF HYDROGENIZED POLYCRYSTALLINE SILICON AND TECHNOLOGY OF THEIR PRODUCTION Russian patent published in 2004 - IPC

FIELD: new materials for electronics and technology of their production. SUBSTANCE: technical result of invention consists in production of films of nanocrystalline silicon with high content of crystalline phase with orientation (III) and low temperature of substrate. Main point of invention lies in increase of rate of inleakage of molecular hydrogen into reactor with reduction of temperature of substrate in process of vacuum-plasma precipitation of silicon on to substrate. Produced film of hydrogenised nanocrystalline silicon contains more than 50% of crystalline phase with average size of crystals less than 10 nm. EFFECT: production of nanocrystalline silicon films with high content of crystalline phase and low temperature of substrate. 2 cl