FIELD: electronic engineering. SUBSTANCE: semiconductor layers of double-barrier quantum heterostructure have thickness affording delay of change carriers in quantum well for time equal to approximately quarter the oscillating period at working frequency and transit-time section has length at which transit angle of charge carriers is within 0,75π-π. EFFECT: improved negative dynamic resistance, efficiency, useful power, and maximum working frequency of transmit-time diode with resonance-tuned tunnel injection of charge carriers. 2 dwg
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