FIELD: electricity.
SUBSTANCE: in method for manufacturing of microcircuit boards with multi-level thin-film commutation including formation of first level conductors vanadium-copper-nickel on ceramic substrate by means of vacuum sputtering with further photolithographic etching, application of insulation layer, opening windows in its for interlevel contacts, formation of interlevel commutation titanium-copper-titanium and conductors of the second level titanium-copper-titanium, formation of structural protection, after opening windows for interlevel contacts, nickel film is etched, and a thin layer of tin is chemically deposited in windows on copper, afterwards, by means of vacuum sputtering through magnetic mask with topological pattern of interlevel commutation, titanium-copper-titanium films are deposited to obtain planar structure.
EFFECT: expansion of functionality and increased switching ability of microcircuit boards with multi-level commutation.
1 dwg
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