FIELD: electronic engineering; integrated circuit manufacture on silicon.
SUBSTANCE: proposed method includes formation of active areas of devices on substrate; masking; opening of contact cuts for active areas; formation of metal deposition system that has amorphous metallide possessing negative mixing heat and incorporating components characterized in higher pressure of inherent vapors or higher sublimation heat than substrate material, and other components of metal deposition system. High stability of metal deposition system provides for manufacturing semiconductor device capable of operating at high temperatures approximately over 650 °C.
EFFECT: provision for preventing ingress of metal deposition system components into active area and escape of impurities from the latter.
6 cl, 2 dwg, 1 tbl
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